stp2301 p channel enhancement mode mosfet -2.8a 120 bentley square, mountain view, ca 94040 usa www.stansontech.com stp2301 2007. v1 1 description the stp2301 is the p-channel logic enhancement mode power field effect transistor is produced using high cell density, dmos trench techn ology. this high density process is especially tailored to minimize on-state resistance. these devices are particularly suited for low volta ge application such as cellular phone and notebook computer power management and other ba tter powered circuits, and low in-line power loss are needed in a very small o utline surface mount package. pin configuration sot-23 1.gate 2.source 3.drain part marking sot-23 y: year code a: process code feature - 20v/-2.8a, r ds(on) = 90m-ohm (typ.) @v gs = -4.5v -20v/-2.0a, r ds(on) = 110m-ohm @v gs = -2.5v super high density cell design for extremely low r ds(on) exceptional on-resistance and maximum dc current capability sot-23 package design 3 1 2 d g s 3 1 2 s01ya
stp2301 p channel enhancement mode mosfet -2.8a 120 bentley square, mountain view, ca 94040 usa www.stansontech.com stp2301 2007. v1 2 absoulte maximum ratings (ta = 25 unless otherwise noted ) parameter symbol typical unit drain-source voltage v dss -20 v gate-source voltage v gss 12 v continuous drain currenttj=150 ) t a =25 t a =70 i d -2.8 -1.5 a pulsed drain current i dm -10 a continuous source current (diode conduction) i s -1.6 a power dissipation t a =25 t a =70 p d 1.25 0.8 w operation junction temperature t j 150 storgae temperature range t stg -55/150 thermal resistance-junction to ambient r ja 120 /w
stp2301 p channel enhancement mode mosfet -2.8a 120 bentley square, mountain view, ca 94040 usa www.stansontech.com stp2301 2007. v1 3 electrical characteristics ( ta = 25 unless otherwise noted ) parameter symbol condition min typ max unit static drain-source breakdown voltage v (br)dss v gs =0v,i d =-250ua -20 v gate threshold voltage v gs(th) v ds =vgs,i d =-250ua -0.4 -1.0 v gate leakage current i gss v ds =0v,v gs = 12v 100 na zero gate voltage drain current i dss v ds =-20v,v gs =0v -1 ua v ds =-20v,v gs =0v t j =55 -10 drain-source on-resistance r ds(on) v gs =-4.5v,i d =-2.8a v gs =-2.5v,i d =-2.0a 0.090 0.110 forward transconductance g fs v ds =-5v,i d =-2.8v 6.5 s diode forward voltage v sd i s =-1.6a,v gs =0v -0.8 -1.2 v dynamic total gate charge q g v ds =-6v v gs =-4.5v i d -2.8a 4.8 8 nc gate-source charge q gs 0.75 gate-drain charge q gd 1.4 input capacitance c iss v ds =-6v v gs =0v f=1mh z 35 pf output capacitance c oss 150 reverse transfer capacitance c rss 60 turn-on time t d(on) tr v dd =-6v r l =6 i d =-1a v gen =-4.5v r g =6 10 20 ns 32 45 turn-off time t d(off) tf 38 55 30 50
stp2301 p channel enhancement mode mosfet -2.8a 120 bentley square, mountain view, ca 94040 usa www.stansontech.com stp2301 2007. v1 4 typical characterictics (25 unless noted)
stp2301 p channel enhancement mode mosfet -2.8a 120 bentley square, mountain view, ca 94040 usa www.stansontech.com stp2301 2007. v1 5 typical characterictics (25 unless noted)
stp2301 p channel enhancement mode mosfet -2.8a 120 bentley square, mountain view, ca 94040 usa www.stansontech.com stp2301 2007. v1 6 typical characterictics (25 unless noted)
stp2301 p channel enhancement mode mosfet -2.8a 120 bentley square, mountain view, ca 94040 usa www.stansontech.com stp2301 2007. v1 7 sot-23 package outline
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